(Hong Kong)
Product Summary
The IXFH26N60Q is a HiPerFET Power MOSFET.
Parametrics
IXFH26N60Q absolute maximum ratings: (1)VDSS: 600 V at TJ = 25℃ to 150℃; (2)VDGR: 600 V at TJ = 25℃ to 150℃; RGS = 1 MΩ; (3)VGS: ±20 V at Continuous; (4)VGSM: ±30 V at Transient; (5)ID25: 26 A at TC = 25℃; (6)IDM: 104 A at TC = 25℃, pulse width limited by TJM; (7)IAR: 26 A at TC = 25℃; (8)EAR: 45 mJ at TC = 25℃; (9)EAS: 1.5 J at TC = 25℃; (10)dv/dt: 5 V/ns at IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150℃, RG = 2 Ω; (11)PD: 360 W at TC = 25℃; (12)TJ: -55 to +150 ℃; (13)TJM: 150 ℃; (14)Tstg: -55 to +150 ℃.
Features
IXFH26N60Q features: (1)Low gate charge; (2)International standard packages; (3)Epoxy meet UL 94 V-0, flammability classification; (4)Low RDS (on) process; (5)Rugged polysilicon gate cell structure; (6)Avalanche energy and current rated; (7)Fast intrinsic Rectifier.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IXFH26N60Q |
Ixys |
MOSFET 600V 26A |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
 |
IXFH 18N60P |
Other |
|
Data Sheet |
Negotiable |
|
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|
IXFH100N25P |
Ixys |
MOSFET 100 Amps 250V 0.027 Rds |
Data Sheet |
Negotiable |
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|
IXFH10N100 |
Ixys |
MOSFET 1KV 10A |
Data Sheet |
Negotiable |
|
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|
IXFH10N100Q |
Ixys |
MOSFET 12 Amps 1000V 1.05 Rds |
Data Sheet |
Negotiable |
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|
IXFH10N80P |
Ixys |
MOSFET 10 Amps 800V 1.1 Rds |
Data Sheet |
Negotiable |
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|
IXFH110N10P |
Ixys |
MOSFET 110 Amps 100V 0.015 Rds |
Data Sheet |
Negotiable |
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