Product Summary

The BU508AF is a NPN Triple Diffused Planar Silicon Transistor. It is designed for TV Horizontal Output Applications.

Parametrics

BU508AF absolute maximum ratings: (1)VCES Collector-Emitter Voltage: 1500 V; (2)VCEO Collector-Emitter Voltage: 700 V; (3)VEBO Emitter-Base Voltage: 5 V; (4)IC Collector Current (DC): 5 A; (5)ICP *Collector Current (Pulse): 15 A; (6)PC Collector Dissipation (TC=25℃): 60 W; (7)TJ Junction Temperature: 150 ℃; (8)TSTG Storage Temperature: - 65 ~ 150 ℃.

Features

BU508AF electrical characteristics: (1)VCEO(sus) Collector-Emitter Sustaining Voltage: 700 V; (2)BVEBO Emitter-Base Breakdown Voltage: 5 V; (3)ICES Collector Cut-off Current: 1 mA; (4)IEBO Emitter Cut-off Current: 10 mA; (5)hFE DC Current Gain: 2.25; (6)VCE(sat) Collector-Emitter Saturation Voltage: 1 V; (7)VBE(sat) Base-Emitter Saturation Voltage: 1.5 V.

Diagrams

BU508AF dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BU508AF
BU508AF
STMicroelectronics
Transistors Switching (Resistor Biased) NPN Power Transistor
Data Sheet
0-1: $0.67
1-10: $0.61
10-100: $0.57
100-250: $0.56
BU508AFI
BU508AFI
STMicroelectronics
Transistors Bipolar (BJT) NPN General Purpose
Data Sheet
Negotiable 
BU508AFTBTU
BU508AFTBTU
Fairchild Semiconductor
Transistors Bipolar (BJT) NPN Triple Diffused Planar Silicon
Data Sheet
Negotiable