Product Summary
The BU508AF is a NPN Triple Diffused Planar Silicon Transistor. It is designed for TV Horizontal Output Applications.
Parametrics
BU508AF absolute maximum ratings: (1)VCES Collector-Emitter Voltage: 1500 V; (2)VCEO Collector-Emitter Voltage: 700 V; (3)VEBO Emitter-Base Voltage: 5 V; (4)IC Collector Current (DC): 5 A; (5)ICP *Collector Current (Pulse): 15 A; (6)PC Collector Dissipation (TC=25℃): 60 W; (7)TJ Junction Temperature: 150 ℃; (8)TSTG Storage Temperature: - 65 ~ 150 ℃.
Features
BU508AF electrical characteristics: (1)VCEO(sus) Collector-Emitter Sustaining Voltage: 700 V; (2)BVEBO Emitter-Base Breakdown Voltage: 5 V; (3)ICES Collector Cut-off Current: 1 mA; (4)IEBO Emitter Cut-off Current: 10 mA; (5)hFE DC Current Gain: 2.25; (6)VCE(sat) Collector-Emitter Saturation Voltage: 1 V; (7)VBE(sat) Base-Emitter Saturation Voltage: 1.5 V.
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() BU508AF |
![]() STMicroelectronics |
![]() Transistors Switching (Resistor Biased) NPN Power Transistor |
![]() Data Sheet |
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![]() BU508AFI |
![]() STMicroelectronics |
![]() Transistors Bipolar (BJT) NPN General Purpose |
![]() Data Sheet |
![]() Negotiable |
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![]() BU508AFTBTU |
![]() Fairchild Semiconductor |
![]() Transistors Bipolar (BJT) NPN Triple Diffused Planar Silicon |
![]() Data Sheet |
![]() Negotiable |
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