(Hong Kong)
Product Summary
The BYG10J-E3 is a silicon mesa SMD rectifier. It is used in Surface mounting, General purpose rectifier.
Parametrics
BYG10J-E3 absolute maximum ratings: (1)Reverse voltage=Repetitive peak reverse voltage VR=VRRM: 600 V; (2)Peak forward surge current IFSM: 30 A; (3)Average forward current IFAV: 1.5 A; (4)Junction and storage temperature range Tj=Tstg: –55 to +150 ℃; (5)Pulse energy in avalanche mode, non repetitive(inductive load switch off) ER: 20 mJ.
Features
BYG10J-E3 features: (1)Controlled avalanche characteristics; (2)Glass passivated junction; (3)Low reverse current; (4)High surge current capability; (5)Wave and reflow solderable.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BYG10J-E3/TR |
Vishay Semiconductors |
Rectifiers 1.5 Amp 600 Volt |
Data Sheet |
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BYG10J-E3/TR3 |
Vishay Semiconductors |
Rectifiers 1.5 Amp 600 Volt |
Data Sheet |
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