(Hong Kong)
Product Summary
The FZ1200R16KF4 is an IGBT module from Infineon Technologies.
Parametrics
FZ1200R16KF4 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1600V; (2)DC-collector current, IC: 1200A; (3)repetitive peak collector current tp=1 ms, ICRM: 2400A; (4)total power dissipation tC=25℃, Transistor /transistor, Ptot: 7800W; (5)gate-emitter peak voltage, VGE: ±20V; (6)DC forward current, IF: 1200A; (7)repetitive peak forw. current tp=1ms, IFRM: 2400A; (8)insulation test voltage RMS, f=50 Hz, t= 1 min, VISOL: 3,4 kV.
Features
FZ1200R16KF4 features: (1)Manufacturer: Infineon; (2)Product Category: IGBT Modules; (3)RoHS: No; (4)Product: IGBT Silicon Modules; (5)Configuration: Dual; (6)Collector- Emitter Voltage VCEO Max: 1600V; (7)Collector-Emitter Saturation Voltage: 3.5V; (8)Continuous Collector Current at 25℃: 1200A; (9)Gate-Emitter Leakage Current:400nA; (10)Power Dissipation:7.8KW; (11)Maximum Operating Temperature:+125℃; (12)Package / Case: IHM130 ; (13)Maximum Gate Emitter Voltage:+/-20V ; (14)Minimum Operating Temperature: -40℃; (15)Mounting Style: SMD/SMT.
Diagrams
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Pricing (USD) |
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 FZ1200R16KF4 |
Infineon Technologies |
IGBT Modules 1600V 1200A SINGLE |
Data Sheet |
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FZ1200R16KF4S1 |
Infineon Technologies |
IGBT Modules 1600V 1200A SINGLE |
Data Sheet |
Negotiable |
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