Product Summary
The MHW2821-2 is the UHF silicon FET power amplifier which is designed for 12.5 volt UHF power amplifier applications in industrial and commercial FM equipment operating from 806 to 950 MHz.
Parametrics
MHW2821-2 absolute maximum ratings: (1)DC Supply Voltages: Vbias= 12.5 V; VS2, VS3=16 Vdc; (2)RF Input Power Pin: 400 mW; (3)RF Output Power Pout: 23 W; (4)Operating Case Temperature Range TC: – 30 to +100 ℃; (5)Storage Temperature Range:– 30 to +100℃.
Features
MHW2821-2 features: (1)LDMOS FET Technology; (2)Epoxy Glass Substrate Eliminates Possibility of Substrate Fracture; (3)50 Ω Input/Output Impedance; (4)Guaranteed Stability and Ruggedness; (5)Cost Effective.
Diagrams
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MHW2821-2 |
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MHW2707-1 |
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MHW2707A1 |
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MHW2727-3 |
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MHW2821-1 |
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MHW2821-2 |
Other |
Data Sheet |
Negotiable |
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