(Hong Kong)
Product Summary
The T1189N is a Phase Control Thyristor.
Parametrics
T1189N absolute maximum ratings: (1)repetitive peak forward off-state and reverse voltages:1200, 1400, 1600, 1800V; (2)non-repetitive peak forward off-state voltage:1200, 1400, 1600, 1800V; (3)non-repetitive peak reverse voltage:1300, 1500, 1700, 1900V; (4)RMS on-state current:2800A; (5)average on-state current:1190A, 1800A; (6)surge current:25500A, 22500A; (7)critical rate of rise of on-state current:200A/us; (8)critical rate of rise of off-state voltage:1000V/us.
Features
T1189N features: (1)on-state voltage:max.2.05V; (2)threshold voltage:0.9V; (3)slope resistance:0.19mΩ; (4)gate trigger current:max.250mA; (5)gate trigger voltage:max.2V; (6)gate non-trigger current:max.200mA, max.10mA; (7)gate non-trigger voltage:max.0.2V; (8)holding current:max.500mA; (9)latching current:max.2500mA; (10)forward off-state and reverse currents:max.150mA; (11)gate controlled delay time:max.4us; (12)circuit commutated turn-off time:typ.240us.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 T1189N08TOF |
Infineon Technologies |
SCR Modules THYRISTOR |
Data Sheet |
Negotiable |
|
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|
T1189N12TOF-S2 |
Infineon Technologies |
Discrete Semiconductor Modules THYRISTOR DISK |
Data Sheet |
Negotiable |
|
||||
|
T1189N14TOF |
Infineon Technologies |
Discrete Semiconductor Modules 1200A |
Data Sheet |
Negotiable |
|
||||
|
T1189N16TOF |
Infineon Technologies |
Discrete Semiconductor Modules 1600V 2800A |
Data Sheet |
Negotiable |
|
||||
|
T1189N18TOF |
Infineon Technologies |
Discrete Semiconductor Modules 1800V 2800A |
Data Sheet |
Negotiable |
|
||||
|
T1189N12TOF |
Infineon Technologies |
SCR Modules 1.2KV 25.5KA |
Data Sheet |
Negotiable |
|
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