(Hong Kong)
Product Summary
The SI7850DP is a N-Channel 60-V (D-S) Fast Switching MOSFET. It is used in Primary Side Switch for 24-V DC/DC Applications, Secondary Synchronous Rectifier.
Parametrics
SI7850DP absolute maximum ratings: (1)Drain-Source Voltage VDS: 60V; (2)Gate-Source Voltage VGS: ±20V; (3)Continuous Drain Current (TJ = 15℃) ID: 10.3A at TA = 25℃,ID: 7.5A at TA = 85℃; (4)Continuous Source Current IS: 3.7A; (5)Pulsed Drain Current IDM: 40A; (6)Avalanche Currentb IAS: 15A; (7)Single Avalanche Energy EAS: 11 mJ; (8)Maximum Power Dissipation PD: 4.5W at TA = 25℃; PD: 2.3W at TA = 85℃; (9)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 150 ℃.
Features
SI7850DP features: (1)TrenchFET Power MOSFET; (2)New Low Thermal Resistance PowerPAK Package with Low 1.07-mm Profile; (3)PWM Optimized for Fast Switching.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 Si7850DP |
Other |
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Data Sheet |
Negotiable |
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SI7850DP-T1 |
Vishay/Siliconix |
MOSFET 60V 10.3A 4.5W |
Data Sheet |
Negotiable |
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SI7850DP-T1-GE3 |
Vishay/Siliconix |
MOSFET 60V 10.3A 4.5W 22mohm @ 10V |
Data Sheet |
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SI7850DP-T1-E3 |
Vishay/Siliconix |
MOSFET 60V 10.3A 4.5W |
Data Sheet |
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