(Hong Kong)
Product Summary
The BLV20 is an NPN silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The BLV20 is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. It has a 3/8 inch flange envelope with a ceramic cap. All leads are isolated from the flange.
Parametrics
BLV20 absolute maximum ratings: (1)Collector-emitter voltage (VBE =0) peak value, VCESM: max. 65 V; (2)Collector-emitter voltage (open base), VCEO: max. 36 V; (3)Emitter-base voltage (open collector), VEBO: max. 4 V; (4)Collector current (average), IC(AV): max. 0,9 A; (5)Collector current (peak value); f > 1 MHz, ICM: max. 2,5 A; (6)R.F. power dissipation (f > 1 MHz); Tmb =25℃, Prf: max. 20 W; (7)Storage temperature, Tstg: -65 to + 150℃; (8)Operating junction temperature, Tj: max. 200℃.
Features
BLV20 features: (1)Collector-emitter breakdown voltage, V(BR)CES: > 65 V; (2)Collector-emitter breakdown voltage, V(BR)CEO: > 36 V; (3)Emitter-base breakdown voltage, V(BR)EBO: > 4V; (4)Collector cut-off current, ICES: < 1mA; (5)Collector-emitter saturation voltage, VCEsat: typ. 0,8 V.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BLV20 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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Data Sheet |
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Data Sheet |
Negotiable |
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Data Sheet |
Negotiable |
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