Product Summary

The MG75Q2YS50 is a Silicon N Channel IGBT module. This module is generally applied to high powr swith and motor control. The MG75Q2YS50 is intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). The MG75Q2YS50 is neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”).

Parametrics

MG75Q2YS50 absolute maximum ratings:(1)Collector-emitter voltage, VCES: 1200V; (2)Gate-emitter voltage, VGES: ±20V; (3)Collector current, DC, IC(25℃ / 80℃): 100 / 75A; (4)Collector current, 1ms, ICP (25℃ / 80℃), 200/150A; (5)Forward current, DC, IF: 75A; (6)Forward current, 1ms, IFM, 150A; (7)Collector power dissipation(Tc = 25℃), PC, 600W; (8)Junction temperature, Tj: 150℃; (9)Storage temperature range, Tstg: 40 ~ 125℃; (10)Isolation voltage, VIsol: 2500(AC 1minute)V; (11)Screw torque (Terminal / mounting): 3/3N·m.

Features

MG75Q2YS50 features:(1)High input impedance; (2)High speed : tf = 0.3 μs (Max) @Iinductive load; (3)Low saturation voltage: VCE (sat) = 3.6 V(Max); (4)Enhancement-mode; (5)Includes a complete half bridge in one package; (6)The electrodes are Isolated from case.

Diagrams

MG75Q2YS50 circuit diagram

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