(Hong Kong)
Product Summary
The SKM150GB123D is an IGBT Module.
Parametrics
SKM150GB123D absolute maximum ratings: (1)VCES: 1200 V; (2)VCGR: 1200 V at RGE = 20 kΩ; (3)IC: 150 / 110 A at Tcase = 25/80 ℃; (4)ICM: 300 / 220 A at Tcase = 25/80 ℃; tp = 1 ms; (5)VGES: ± 20 V; (6)Ptot: 830 W at per IGBT, Tcase = 25 ℃; (7)Tj, (Tstg): – 40 to +150 (125) ℃; (8)Visol: 2500 V at AC, 1 min.
Features
SKM150GB123D features: (1)MOS input (voltage controlled); (2)N channel, Homogeneous Si; (3)Low inductance case; (4)Very low tail current with low temperature dependence; (5)High short circuit capability, self limiting to 6 * Icnom; (6)Latch-up free; (7)Fast & soft inverse CAL diodes; (8)Isolated copper baseplate using DCB Direct Copper Bonding Technology; (9)Large clearance (12 mm) and creepage distances (20 mm).
Diagrams
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 SKM100GAL123D |
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SKM100GB124D |
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Negotiable |
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SKM100GB125DN |
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Negotiable |
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SKM100GB173D |
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Negotiable |
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SKM111AR |
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Negotiable |
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SKM121AR |
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Negotiable |
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